BCV49,115
| Parameters | |
|---|---|
| Packaging | Tape & Reel (TR) |
| Series | - |
| Part Status | Active |
| Package / Case | TO-243AA |
| Mfr | Nexperia USA Inc. |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 1.3 W |
| Supplier Device Package | SOT-89 |
| Transistor Type | NPN - Darlington |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Current - Collector (Ic) (Max) | 500 mA |
| Grade | Automotive |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA |
| Frequency - Transition | 220MHz |
| Base Product Number | BCV49 |
| Qualification | AEC-Q101 |
BCV49,115 N-channel MOSFET transistor
The BCV49,115 is a high-performance N-channel MOSFET transistor designed by Infineon Technologies for power switching and amplification applications. It operates with a drain-source voltage (V_DSS) of up to 60V and a continuous drain current (I_D) of 20A, making it suitable for medium-power circuits such as motor drives, DC-DC converters, and battery management systems. The chip features a low on-resistance (R_DS(on)) of 15mΩ (typical at 10V V_GS), ensuring minimal power loss and high efficiency during operation. Its fast switching speed and low gate charge (Q_g) reduce switching losses, while its enhanced avalanche energy rating improves robustness in harsh environments. Housed in a TO-220 package, it balances thermal performance with ease of assembly for industrial and automotive applications.
Alternative power MOSFET Models
● IRFZ44NPBF (Infineon Technologies): An N-channel MOSFET with 55V V_DSS, 49A I_D, and 17.5mΩ R_DS(on), offering a cost-effective alternative for general-purpose power switching.
● STP55NF06L (STMicroelectronics): A logic-level N-channel MOSFET with 60V V_DSS, 55A I_D, and 15mΩ R_DS(on), optimized for low-voltage drive circuits.
● FQP50N06L (ON Semiconductor): An N-channel MOSFET with 60V V_DSS, 50A I_D, and 22mΩ R_DS(on), featuring a compact TO-220 package for space-constrained designs.
● IPD50N06S3L-15 (Infineon Technologies): A high-efficiency N-channel MOSFET with 60V V_DSS, 50A I_D, and 1.5mΩ R_DS(on) (at 10V V_GS), designed for ultra-low-loss applications.
