Nexperia USA Inc. BSS138BKS/S500X,115

BSS138BKS/S500X,115 N-channel MOSFET Power transistor

The BSS138BKS/S500X,115 is an N-channel enhancement-mode power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) developed by Nexperia. As an enhancement-mode device, it remains non-conductive when the gate-source voltage (VGS) is zero and turns on when VGS exceeds its threshold voltage, enabling precise control over current flow between the drain and source terminals. It features a maximum drain-source voltage (VDS) of 60V, a critical parameter supporting compatibility with medium-voltage power systems, while its optimized semiconductor structure ensures seamless integration with both analog and digital control circuits.

This versatile N-channel MOSFET finds extensive application across diverse electronic sectors, including consumer electronics such as smartphones, tablets, and laptop power management modules, where it serves as a load switch or signal router to conserve battery life. It is also widely used in industrial automation systems for controlling sensors and actuators, in automotive electronics for low-voltage auxiliary circuits (e.g., infotainment and lighting systems), and in LED driver circuits to regulate current flow and prevent component overheating.

Alternative MOSFET options

● TI's VN1380 is an SOT-23-packaged N-channel MOSFET with 60V VDS, 200mA ID, and 3.5Ω typical Rdson, offering drop-in compatibility for consumer and industrial switching applications.

● onsemi's 2N7002K features 60V breakdown voltage, 200mA continuous current, and low gate charge, packaged in SOT-23, ideal for battery-powered devices and general-purpose switching. 

● ST's STD138 is an SOT-23 N-channel MOSFET with 60V VDS, 220mA ID, and enhanced ESD protection up to 4kV HBM, tailored for harsh industrial and automotive environments. 

● Vishay's Si2301BDS-T1-GE3 delivers a lower typical Rdson of 2.8Ω at 4.5V VGS, 60V VDS, and SOT-23 packaging, optimized for high-efficiency power management in IoT devices.