| Parameters | |
|---|---|
| Packaging | Tape & Reel (TR) |
| Series | - |
| Part Status | Active |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 220mW |
| Configuration | 2 N-Channel (Dual) |
| Supplier Device Package | 6-TSSOP |
| Rds On (Max) @ Id, Vgs | 4.5Ohm @ 100mA, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 17pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 0.43nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Current - Continuous Drain (Id) @ 25°C | 170mA |
| Drain to Source Voltage (Vdss) | 60V |
| Base Product Number | NX7002 |
| Manufacturer | Nexperia USA Inc. |
NX7002AKS,115 Field-Effect Transistor N-channel FET
The NX7002AKS,115 from Nexperia is a dual N-channel enhancement mode Field-Effect Transistor (FET) utilizing advanced Trench MOSFET technology and housed in an ultra-compact SOT363 (SC-88) surface-mount package. This device is engineered for space-constrained, low-power switching applications requiring high reliability and fast performance.
This dual MOSFET delivers exceptional performance in a miniature footprint. Its Trench MOSFET technology ensures very fast switching speeds and low conduction losses, making it highly efficient for signal switching. The integrated ESD protection enhances device robustness against electrostatic discharge during handling and operation. The logic-level gate feature allows for direct drive by low-voltage microcontrollers (typically 3.3V or 5V), simplifying interface circuitry. The extremely small SOT363 package (also known as SC-88 or TSSOP-6) saves valuable PCB real estate, which is critical for portable and high-density electronic designs. Furthermore, the device offers low input capacitance (Ciss max of 17pF at Vds=10V), which contributes to reduced gate drive requirements and faster switching transitions. It is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, ensuring environmental compliance and ease of handling in manufacturing.
Alternative MOSFET Models
● VBK362K (VBsemi): A high-performance domestic alternative in an SC70-6 package, offering a lower on-resistance of 2.5Ω at 10V and a slightly higher continuous drain current of 0.3A, providing an upgrade path for efficiency and current handling.
● BSS138PS,115 (NXP): A widely used dual N-channel MOSFET with similar 60V Vdss and SOT-363 package, featuring a continuous drain current of 0.32A and logic-level gate drive, serving as a common cross-reference.
● 2N7002KT1G (onsemi): A popular dual N-channel logic-level MOSFET in a SOT-363 package, known for its reliability and common availability in general-purpose switching and interface circuits.
● TSM2N7002AKDCU6 (RFG Taiwan Semiconductor): A functionally similar dual N-channel MOSFET designed as a direct alternative, providing comparable electrical characteristics in a compact SMD package.