PHK04P02T,518
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| Parameters | |
|---|---|
| Mfr | Nexperia USA Inc. |
| Series | - |
| Packaging | Bulk |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 16 V |
| Current - Continuous Drain (Id) @ 25°C | 4.66A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 600mV @ 1mA (Typ) |
| Gate Charge (Qg) (Max) @ Vgs | 7.2 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 528 pF @ 12.8 V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
