PHKD6N02LT,518
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| Parameters | |
|---|---|
| Manufacturer | Nexperia USA Inc. |
| Series | TrenchMOS™ |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10.9A |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 3A, 5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15.3nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 10V |
| Power - Max | 4.17W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Base Product Number | PHKD6 |
