PMBT3904,215

TRANS NPN 40V 0.2A TO-236AB


  • Manufacturer: Nexperia USA Inc.
  • CONEVO NO: PMBT3904,215
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: In stock
If you have any question, please feel free to contact with us.We will reply you within 24 hours.

Details

Tags

Parameters
Packaging Tape & Reel (TR)
Series -
Part Status Active
Package / Case TO-236-3, SC-59, SOT-23-3
Mfr Nexperia USA Inc.
Mounting Type Surface Mount
Operating Temperature 150°C (TJ)
Power - Max 250 mW
Supplier Device Package TO-236AB
Transistor Type NPN
Current - Collector Cutoff (Max) 50nA (ICBO)
Voltage - Collector Emitter Breakdown (Max) 40 V
Current - Collector (Ic) (Max) 200 mA
Grade Automotive
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Frequency - Transition 300MHz
Base Product Number PMBT3904
Qualification AEC-Q101

PMBT3904,215 NPN bipolar junction transistor 

The PMBT3904,215 is a general-purpose NPN bipolar junction transistor (BJT) from Nexperia, housed in the compact SOT-23 surface-mount package. It is a widely used, industry-standard device known for its reliability and versatility in low-power switching and amplification applications. With a collector-emitter voltage of 40V and a continuous collector current of 200 mA, it is well-suited for a broad range of circuit functions in consumer electronics, embedded systems, and industrial controls. Its primary role is to function as a switch to control higher-power loads or as a small-signal amplifier to boost audio, radio, or digital signals.

This transistor offers a DC current gain (hFE) typically ranging from 100 to 300 at 10 mA, ensuring sufficient amplification. Key specifications include a low collector-emitter saturation voltage, which minimizes power loss when the transistor is used as a switch. The device supports a transition frequency (fT) of 300 MHz, making it suitable for high-frequency applications. Housed in the ubiquitous SOT-23 package, it is characterized for operation over a junction temperature range of -55°C to +150°C.

Alternative BJT Models

● onsemi MMBT3904LT1G: An equivalent SOT-23 packaged NPN general-purpose transistor with identical electrical characteristics, offering direct form-fit-function compatibility.

● Diodes Incorporated MMBT3904-7-F: A high-performance SOT-23 NPN transistor with similar specifications, widely used as a standard switching and amplification device.

● ROHM 2SC4081U3T1G: A general-purpose NPN transistor in an SOT-323 package, providing comparable performance in an even smaller form factor for space-constrained designs.

Contact Information
close