PMGD780SN,115
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| Parameters | |
|---|---|
| Manufacturer | Nexperia USA Inc. |
| Series | TrenchMOS™ |
| Packaging | Tape & Reel (TR) |
| Part Status | Not For New Designs |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 490mA |
| Rds On (Max) @ Id, Vgs | 920mOhm @ 300mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.05nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 23pF @ 30V |
| Power - Max | 410mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | 6-TSSOP |
| Base Product Number | PMGD780 |
