PMV213SN,215
| Parameters | |
|---|---|
| Packaging | Tape & Reel (TR) |
| Series | TrenchMOS™ |
| Part Status | Not For New Designs |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mfr | Nexperia USA Inc. |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-236AB |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| FET Feature | - |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Vgs (Max) | ±30V |
| Grade | - |
| Base Product Number | PMV213 |
| Power Dissipation (Max) | 280mW (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Qualification | - |
PMV213SN,215 Nexperia N-Channel TrenchMOS™ Standard Level FET
The PMV213SN,215 is an N-channel enhancement-mode field-effect transistor manufactured by Nexperia (formerly the Standard Products division of NXP), built on the company's established TrenchMOS™ technology platform and housed in a SOT-23-3 (TO-236AB / SC-59) 3-pin surface-mount plastic package measuring 2.9 × 1.3 × 1.0 mm. Its gate threshold sits at VGS(th)typ ~2–3 V (max 4 V @ 1 mA) and it is intended to be fully enhanced / driven at the conventional 10 V gate drive level (not a low-threshold logic-level MOSFET). The chip supports a drain-source breakdown voltage of 100 V with a continuous drain current rating of 1.9 A @ 25°C (Tc) — making it a compact, rugged small-power switching transistor for off-line auxiliary rails, DC-DC primary-side stages, relay/solenoid low-side drivers, and distributed load-switch nodes that sit above the reach of ordinary 60 V small-signal FETS like the 2N7002.
Classic deployment scenarios include low-side switching of 12–48 V (up to 80 V margin) loads such as relays, solenoid latches, LED strings, fan motors, and small heater elements; primary-side or aux-rail switching in isolated DC-DC topologies; and power-domain gating where a 100 V rating provides headroom that 60 V small-signal FETs cannot safely cover. Its fast switching and modest Qgkeep gate-drive requirements light compared to larger power MOSFETs, while the SOT-23-3 footprint keeps BOM area minimal.
Alternative N-channel MOSFETs
● IRLML0100TRPBF: Widely stocked 100 V / 1.6 A N-channel in SOT-23-3 with lower RDS(on)(~180 mΩ @ 10 V) and logic-level characteristic (VGS(th)~2.5 V).
● ZXMN10A07FTA: 100 V N-channel SOT-23 option rated ~800 mA continuous with RDS(on)~700 mΩ @ 10 V and strong gain (gfs) profile.
● BSP297: SOT-223 packaged 100 V / ~1 A N-MOS with a larger thermal pad than SOT-23-3.
