PHT6N06T,135
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| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 150mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-73 |
| Package / Case | TO-261-4, TO-261AA |
| Base Product Number | PHT6 |
| Mfr | NXP USA Inc. |
| Series | TrenchMOS™ |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
