PMGD400UN,115
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| Parameters | |
|---|---|
| Manufacturer | NXP USA Inc. |
| Series | TrenchMOS™ |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 710mA |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 200mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.89nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 43pF @ 25V |
| Power - Max | 410mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | 6-TSSOP |
| Base Product Number | PMGD4 |
