Renesas Electronics America Inc 6116LA35DB
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| Parameters | |
|---|---|
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 16Kbit |
| Memory Organization | 2K x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 35ns |
| Access Time | 35 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | -55°C ~ 125°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 24-CDIP (0.600", 15.24mm) |
| Supplier Device Package | 24-CDIP |
| Base Product Number | 6116LA |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | 3A001A2C |
| HTSUS | 8542.32.0041 |
| Standard Package | 15 |
| Mfr | Renesas Electronics America Inc |
| Series | - |
SRAM - Asynchronous Memory IC 16Kbit Parallel 35 ns 24-CDIP
