Renesas Electronics America Inc 70T659S12BCI
| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Size | 4.5Mbit |
| Memory Organization | 128K x 36 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 12ns |
| Access Time | 12 ns |
| Voltage - Supply | 2.4V ~ 2.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 256-LBGA |
| Supplier Device Package | 256-CABGA (17x17) |
| Base Product Number | 70T659 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 6 |
SRAM - Dual Port, Asynchronous Memory IC 4.5Mbit Parallel 12 ns 256-CABGA (17x17)
