Renesas Electronics America Inc 70V659S10DR
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| Parameters | |
|---|---|
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Size | 4.5Mbit |
| Memory Organization | 128K x 36 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 10ns |
| Access Time | 10 ns |
| Voltage - Supply | 3.15V ~ 3.45V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 208-BFQFP |
| Supplier Device Package | 208-PQFP (28x28) |
| Base Product Number | 70V659 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 6 |
SRAM - Dual Port, Asynchronous Memory IC 4.5Mbit Parallel 10 ns 208-PQFP (28x28)
