Renesas Electronics America Inc IDT6116SA35TPGI
| Parameters | |
|---|---|
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 16Kbit |
| Memory Organization | 2K x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 35ns |
| Access Time | 35 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 24-DIP (0.300", 7.62mm) |
| Supplier Device Package | 24-PDIP |
| Base Product Number | IDT6116 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0041 |
| Other Names | 6116SA35TPGI |
| Standard Package | 15 |
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Tube |
SRAM - Asynchronous Memory IC 16Kbit Parallel 35 ns 24-PDIP
