Renesas Electronics America Inc IDT71V3579S65PF
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| Parameters | |
|---|---|
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Other Names | 71V3579S65PF |
| Standard Package | 72 |
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, SDR |
| Memory Size | 4.5Mbit |
| Memory Organization | 256K x 18 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | - |
| Access Time | 6.5 ns |
| Voltage - Supply | 3.135V ~ 3.465V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 100-LQFP |
| Supplier Device Package | 100-TQFP (14x20) |
| Base Product Number | IDT71V3579 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 6.5 ns 100-TQFP (14x20)
