Renesas Electronics America Inc IDT71V65802S133BG
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| Parameters | |
|---|---|
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Other Names | 71V65802S133BG |
| Standard Package | 84 |
| Mfr | Renesas Electronics America Inc |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Synchronous, SDR (ZBT) |
| Memory Size | 9Mbit |
| Memory Organization | 512K x 18 |
| Memory Interface | Parallel |
| Clock Frequency | 133 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 4.2 ns |
| Voltage - Supply | 3.135V ~ 3.465V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 119-BGA |
| Supplier Device Package | 119-PBGA (14x22) |
| Base Product Number | IDT71V65802 |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 133 MHz 4.2 ns 119-PBGA (14x22)
