Samsung Semiconductor, Inc. K4F6E3S4HM-MGCJ

K4F6E3S4HM-MGCJ


  • Manufacturer: Samsung Semiconductor, Inc.
  • CONEVO NO: K4F6E3S4HM-MGCJ
  • Package: 200-TFBGA
  • Datasheet: -
  • Stock: In stock
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Parameters
Series -
RoHS Status ROHS3 Compliant
Mfr Samsung Semiconductor, Inc.
Package Tray
Product Status Active
Other Names 3277-K4F6E3S4HM-MGCJ
Standard Package 1,280

Samsung Semiconductor K4F6E3S4HM-MGCJ Memory IC Overview

The Samsung K4F6E3S4HM-MGCJ is a high-performance DDR4 SDRAM memory chip designed for data-intensive applications.  This component features a 4Gb (512M x 8) density, operates at a voltage range of 1.14V to 1.26V, and supports a data transfer rate of up to 3200 Mbps.  Built on advanced 10nm-class process technology, it utilizes a 78-ball FBGA package optimized for space-constrained designs.  The SDRAM memory chip operates within a temperature range of -25°C to +85°C, ensuring reliability across industrial and commercial environments.

Key Features

This IC integrates low-power DDR4 architecture with auto-refresh and self-refresh modes to minimize energy consumption.  Its dual-channel configuration enables high-bandwidth data throughput, while on-die termination (ODT) reduces signal reflection for improved signal integrity.  The chip supports error correction code (ECC) for enhanced data accuracy and features programmable burst lengths (BL8/BC4/OTF) for flexible system integration.  Robust thermal management ensures stable operation under extended workloads.

Application Scenarios

The K4F6E3S4HM-MGCJ is ideal for high-speed computing systems, including enterprise servers, data center storage arrays, and AI/ML acceleration hardware.  It is widely deployed in 5G network infrastructure, automotive ADAS modules, and industrial automation controllers requiring low-latency memory access.  Additionally, its compact form factor suits consumer electronics such as ultra-thin laptops, gaming consoles, and IoT edge devices.

Selection Advantages

Samsung's K4F6E3S4HM-MGCJ outperforms competitors with its industry-leading power efficiency (30% lower active power vs. previous-gen DDR3).  Rigorous quality testing guarantees compliance with JEDEC standards and extended lifecycle support for industrial deployments.  Its backward compatibility with DDR4-2400/2666 systems simplifies upgrades, while Samsung's global supply chain ensures scalable procurement.  Engineers benefit from detailed technical documentation and dedicated firmware optimization tools to accelerate time-to-market.

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