Texas Instruments BQ4010YMA-150N
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| Parameters | |
|---|---|
| Mfr | Texas Instruments |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 64Kbit |
| Memory Organization | 8K x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 150ns |
| Access Time | 150 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 28-DIP Module (0.61", 15.49mm) |
| Supplier Device Package | 28-DIP Module (18.42x37.72) |
| Base Product Number | BQ4010 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8473.30.1180 |
| Standard Package | 14 |
NVSRAM (Non-Volatile SRAM) Memory IC 64Kbit Parallel 150 ns 28-DIP Module (18.42x37.72)
