W25N01GVZEIG
| Parameters | |
|---|---|
| Series | SpiFlash® |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 8-WDFN Exposed Pad |
| Mfr | Winbond Electronics |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Technology | FLASH - NAND (SLC) |
| Supplier Device Package | 8-WSON (8x6) |
| Access Time | 7 ns |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Voltage - Supply | 2.7V ~ 3.6V |
| Clock Frequency | 104 MHz |
| Memory Organization | 128M x 8 |
| Memory Format | FLASH |
| Memory Interface | SPI - Quad I/O |
| Write Cycle Time - Word, Page | 700µs |
| Package | Tray |
| Product Status | Active |
| Base Product Number | W25N01 |
| REACH Status | REACH Unaffected |
| Other Names | 256-W25N01GVZEIG |
| Standard Package | 480 |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
W25N01GVZEIG NAND flash memory IC 1Gbit SPI - Quad I/O 104 MHz 7 ns
The W25N01GVZEIG is a high-density, high-performance 1 Giga-bit (128 MByte) serial NAND flash memory device manufactured by Winbond Electronics, engineered for reliable, cost-effective non-volatile data storage in embedded systems. Housed in a compact 8-pin WSON-8 (6x8mm) package, this device operates over a wide voltage range (2.7V to 3.6V) and features a dual/spi quad serial peripheral interface (SPI) supporting clock frequencies up to 133 MHz, enabling fast read/write speeds (up to 104 MB/s for sequential reads).
Key features include a 4KB erase block size (optimized for small data updates), 100,000 program/erase cycles per block, 20-year data retention, and built-in ECC (Error Correction Code) for 1-bit error correction per 512-byte sector, enhancing data integrity. Additionally, it supports multiple I/O modes (Single/ Dual/ Quad/ Octal SPI), has a power-down current of <1µA (typical), operates across -40°C to +85°C industrial temperature range, and is RoHS-compliant, making it ideal for space-constrained, high-reliability embedded applications.
Selection Guide & Alternative Models
When selecting flash memory, prioritize matching its storage density (1Gbit), interface speed (up to 133MHz SPI), and voltage range to your system's requirements. Also, consider block erase size for data management needs and package type for PCB space constraints, and verify temperature range for harsh environment deployments. For applications requiring alternative solutions from leading semiconductor manufacturers, the following models are recommended:
● MT29F1G08ABAEAWP-IT:E (Micron Technology): A 1Gbit NAND flash memory with 8-bit parallel interface, 4KB erase blocks, and TSOP-48 package, optimized for high-throughput industrial and automotive storage applications.
● S25FL128SAGMFI010 (Cypress/Infineon): A 128Mbit serial NOR flash with quad SPI interface (133MHz), 100,000 endurance cycles, and SOIC-8 package, a versatile alternative for firmware storage in consumer and industrial devices.
● GD25LX100E (GigaDevice Semiconductor): A 1Gbit serial NAND flash with quad SPI interface (104MHz), built-in ECC, and WSON-8 package, a cost-efficient alternative for IoT and embedded systems requiring high reliability.
● IS25LP128F-JBLE (ISSI): A 128Mbit low-power serial NOR flash with dual/quad SPI (108MHz), 20-year data retention, and USON-8 package, suited for battery-powered portable and wearable devices.
