W29N01HVSINA
| Parameters | |
|---|---|
| Series | - |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| RoHS Status | ROHS3 Compliant |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Mfr | Winbond Electronics |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Technology | FLASH - NAND (SLC) |
| Supplier Device Package | 48-TSOP |
| Access Time | 25 ns |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Voltage - Supply | 2.7V ~ 3.6V |
| Memory Organization | 128M x 8 |
| Memory Format | FLASH |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 25ns |
| Package | Tray |
| Product Status | Active |
| Base Product Number | W29N01 |
| REACH Status | REACH Unaffected |
| Standard Package | 96 |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
W29N01HVSINA SLC NAND flash memory IC 1Gbit Parallel 25 ns 48-TSOP
The W29N01HVSINA is a 1G-bit (128M × 8) SLC NAND flash memory from Winbond Electronics, housed in a 48-pin TSOP package and designed for high-performance data storage in embedded systems. It operates from a single 2.7 V to 3.6 V supply with a maximum active current of 35 mA and supports the standard NAND flash interface with an 8-bit multiplexed I/O bus for data, address, and command transfer. The memory chip features a page size of 2,112 bytes (2,048 + 64 bytes) and a block size of 64 pages (128K + 4K bytes), with an industrial temperature range of −40 °C to +85 °C, making it suitable for a wide range of consumer, industrial, and automotive applications.
Key features include single-level cell (SLC) NAND technology for high reliability and endurance, a 1G-bit density in a single chip, and a standard NAND interface with CLE, ALE, CE, RE, and WE control signals for easy integration with microcontrollers and SoCs. The device supports page read, page program, copy-back, block erase, and reset operations, along with write protect (WP) and ready/busy (RY/BY) status monitoring for robust system-level protection. Electrical characteristics include a typical standby current of 10 µA, enabling low-power operation in battery-powered systems, and built-in ECC support for error detection and correction in data-intensive applications.
Alternative SLC NAND memory Models
● W29N02GVSIAA: 2G-bit SLC NAND flash from Winbond with similar 3.3 V operation and NAND interface, offering higher density for applications requiring more storage capacity.
● MX30LF1G08AA-XKI: 1G-bit NAND flash from Macronix with 3.3 V operation and standard NAND interface, providing an alternative SLC solution for code and data storage.
● MT29F1G08AB: 1G-bit NAND flash from Micron Technology with comparable density and performance, suitable for consumer and industrial data storage applications.
● K9WAG08U1M: 1G x 8 / 2G x 8 bit NAND flash from Samsung with high-speed data transfer and SLC technology, ideal for performance-critical storage systems.
