Parameters | |
---|---|
Series | F-RAM™ |
Package / Case | 28-SOIC (0.295", 7.50mm Width) |
Mfr | Cypress Semiconductor Corp |
Mounting Type | Surface Mount |
Operating Temperature | -40°C ~ 85°C (TA) |
Technology | FRAM (Ferroelectric RAM) |
Supplier Device Package | 28-SOIC |
Access Time | 140 ns |
Memory Size | 256Kbit |
Memory Type | Non-Volatile |
Voltage - Supply | 2V ~ 3.6V |
Memory Organization | 32K x 8 |
Memory Format | FRAM |
Memory Interface | Parallel |
Write Cycle Time - Word, Page | 140ns |
Package | Bulk |
Product Status | Active |
Base Product Number | FM28V020 |
Standard Package | 1 |
ConevoKey Programmable | Not Verified |
Cypress FRAM memory FM28V020-SGTR non-volatile RAM 256Kbit Parallel 140 ns
The FM28V020-SGTR is a high-performance 2-Megabit (256K x 8) FRAM (Ferroelectric Random Access Memory) chip manufactured by Cypress Semiconductor (now Infineon Technologies). Unlike traditional SRAM or flash memory, FRAM combines the fast read/write speeds of RAM with non-volatile data retention, making it ideal for applications requiring frequent data writes and high endurance. The FM28V020-SGTR operates at a voltage range of 2.7V to 3.6V, ensuring compatibility with low-power embedded systems while delivering virtually unlimited write cycles (10^14 read/write operations) and 10-year data retention without power.
This memory chip features a standard parallel interface with a fast 70ns access time, making it suitable for high-speed data logging, industrial automation, and real-time processing applications. The FM28V020-SGTR is designed to withstand harsh environments, with an industrial temperature range (-40°C to +85°C), ensuring reliable operation in automotive, medical, and aerospace systems. Additionally, it provides instant non-volatility, meaning data is retained immediately upon power loss, eliminating the need for backup batteries or capacitors typically required in SRAM-based solutions.
The FM28V020-SGTR comes in a 44-pin TSOP (Thin Small Outline Package), offering a compact footprint for space-constrained designs. Its low power consumption and high noise immunity make it an excellent choice for battery-powered and mission-critical applications. The chip is fully compatible with standard EEPROM and SRAM pinouts, allowing for easy migration from legacy memory technologies while providing superior performance and endurance.
Alternative Models & Key Features:
● FM28V100-SGTR: 1-Mbit (128K x 8) FRAM, lower density for cost-sensitive applications.
● FM18W08-SG: 512Kb (64K x 8) FRAM, 5V operation, legacy parallel interface.
● MB85RS2MTYPNF-G-JNERE1: Fujitsu 2-Mbit SPI FRAM, serial interface for reduced pin count.
● CY15B104Q-SXE: Infineon 4-Mbit SPI FRAM, higher density with serial communication.