Infineon Technologies CY15B104QN-50PZXI
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| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q100, Excelon™-Auto, F-RAM™ |
| Package | Tube |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Size | 4Mbit |
| Memory Organization | 512K x 8 |
| Memory Interface | SPI |
| Clock Frequency | 50 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 8 ns |
| Voltage - Supply | 1.8V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Through Hole |
| Package / Case | 8-DIP (0.300", 7.62mm) |
| Supplier Device Package | 8-PDIP |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| ECCN | 3A991B1B2 |
| HTSUS | 8542.32.0071 |
| Standard Package | 265 |
FRAM (Ferroelectric RAM) Memory IC 4Mbit SPI 50 MHz 8 ns 8-PDIP
