IR11671ASTRPBF
Introducing IR11671ASTRPBF, a highly efficient HEXFET power MOSFET offered by International Rectifier. This power MOSFET is designed with the latest technology to deliver superb performance in a wide range of application settings. The IR11671ASTRPBF boasts a low on-resistance per silicon area, making it an ideal choice for high-switching applications. With a drain current rating of 180A and a continuous drain current (ID) of 62A, this power MOSFET is capable of handling demanding loads with ease. Featuring a fast body diode recovery time, this MOSFET ensures reduced power loss and high efficiency, making it perfect for power supply systems, motor drives, and more. Moreover, it offers a low gate charge and low gate-to-drain charge, enabling smooth and reliable operation. Built with advanced process techniques, the IR11671ASTRPBF offers excellent thermal capabilities, ensuring optimum performance even under high-temperature conditions. Additionally, it is housed in a compact TO-252 package, providing ease of installation and space-saving convenience. Incorporate the IR11671ASTRPBF in your power applications to enjoy the benefits of efficiency, reliability, and high-performance offered by International Rectifier.
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