AUIR2085STRPBF

Introducing the AUIR2085STRPBF, a cutting-edge power MOSFET designed to revolutionize the automotive industry. This high-side MOSFET is specifically created for use in harsh environments, making it ideal for automotive applications that demand ruggedness and reliability. The AUIR2085STRPBF offers a low ON-resistance of just 1.1mΩ, delivering high efficiency and minimizing power losses. It also features a high-current capability, with a continuous drain current rating of 80A and a peak drain current of 320A, ensuring exceptional performance even under demanding conditions. With an operating voltage range of 7V to 40V, this power MOSFET provides versatility for use in various automotive systems. Its innovative design incorporates advanced trench technology, resulting in enhanced thermal performance and reduced power dissipation. Furthermore, the AUIR2085STRPBF offers a compact and lightweight package, facilitating easy integration into space-constrained applications. Its automotive-grade qualification guarantees reliability, longevity, and compliance with the strict industry standards. Experience the next level of automotive power management with the AUIR2085STRPBF power MOSFET. Trust in its durability, efficiency, and innovation to optimize the performance of your automotive systems like never before.

banner

Other Products

View More
  • CA0508JRNPO9BN330-ND

    CA0508JRNPO9BN330-ND

  • 445-10122-2-ND,445-10122-1-ND,445-10122-6-ND

    445-10122-2-ND,445-10122-1-ND,445-10122-6-ND

  • 2368-MRRC370V7R5/20-ND

    2368-MRRC370V7R5/20-ND

  • 399-CA064C103K5RAL7800TR-ND

    399-CA064C103K5RAL7800TR-ND

  • W1A2ZC471MAT2A-ND

    W1A2ZC471MAT2A-ND

  • W2A43C471KAT2A-ND

    W2A43C471KAT2A-ND

  • 399-CA064C151K4GAC7800TR-ND

    399-CA064C151K4GAC7800TR-ND

  • 445-10216-2-ND,445-10216-1-ND,445-10216-6-ND

    445-10216-2-ND,445-10216-1-ND,445-10216-6-ND

  • W2A43C472MAT2A-ND

    W2A43C472MAT2A-ND

  • SFS44T20-10K291E-F-ND

    SFS44T20-10K291E-F-ND

  • W3A43A221KAT2A-ND

    W3A43A221KAT2A-ND

  • 478-W3A4ZC473KAT2FTR-ND

    478-W3A4ZC473KAT2FTR-ND

Related Blogs

  • 2026 / 03 / 30

    Apple to Integrate YMTC NAND Flash, Exclusively for China Market

    Apple partners with YMTC to integrate China-made NAND flash into China-exclusive iPhones, cutting costs amid rising memory prices. ...

    Apple to Integrate YMTC NAND Flash, Exclusively for China Market
  • 2026 / 03 / 27

    Micron Considers Acquisition of JDI's Mobara Plant

    Micron is in talks to acquire JDI's Mobara LCD plant in Japan for conversion into a semiconductor assembly and testing facility....

    Micron Considers Acquisition of JDI's Mobara Plant
  • 2026 / 03 / 26

    Tower Semiconductor Strategically Restructures Japan Operations

    Tower Semiconductor restructures Japan operations: acquires full ownership of 300mm Fab 7 while Nuvoton takes 200mm Fab 5 for $25M...

    Tower Semiconductor Strategically Restructures Japan Operations
  • 2026 / 03 / 25

    Mastering the AMD/Xilinx Product Spectrum: CPLD/FPGA Comprehensive Guide

    A comprehensive guide to AMD/Xilinx FPGA evolution, spanning from classic CPLDs and early XC3000/4000 architectures through cost-optimized Spartan series to cutting-edge Zynq UltraScale+ MPSoCs......

    Mastering the AMD/Xilinx Product Spectrum: CPLD/FPGA Comprehensive Guide
  • 2026 / 03 / 24

    FCC Imposes Comprehensive Ban on Foreign-Manufactured Routers

    The FCC has banned all foreign-manufactured consumer routers from entering the U.S. market without authorization, citing national security risks....

    FCC Imposes Comprehensive Ban on Foreign-Manufactured Routers
  • 2026 / 03 / 23

    Qorvo RF Enterprise: Analysis of Its Popular GaN Amplifier Products

    Discover Qorvo's industry-leading RF solutions and GaN power amplifiers. From 5G infrastructure to satellite communications, explore best-selling ICs including QPA2966, TGA2214-CP, and QPA1314......

    Qorvo RF Enterprise: Analysis of Its Popular GaN Amplifier Products
  • 2026 / 03 / 20

    Three core components of power electronics: MOSFET, BJT, and IGBT

    A concise comparison of MOSFET, BJT, and IGBT— fundamental power semiconductor devices spanning voltage-controlled high-speed switching, current-controlled amplification, and hybrid high-voltage power solutions...

    Three core components of power electronics: MOSFET, BJT, and IGBT
  • 2026 / 03 / 19

    Middle East Conflict Triggers Risk of Surging Chip Material Costs

    Middle East conflict disrupts Qatar's helium supply, threatening semiconductor manufacturing costs. Chipmakers rely on helium for lithography, cooling, and leak detection—with no viable substitutes....

    Middle East Conflict Triggers Risk of Surging Chip Material Costs
  • 2026 / 03 / 18

    Break the Ice! NVIDIA Resumes H200 Production for China

    Nvidia resumes H200 chip production for China after securing U.S. export licenses. The restart follows December 2025 policy changes allowing sales with 25% revenue-sharing requirements....

    Break the Ice! NVIDIA Resumes H200 Production for China
  • 2026 / 03 / 17

    Sony CIS Yield Crisis: Supply Chain Concerns for Apple

    Sony faces yield challenges at its Nagasaki CIS plant, risking supply disruptions to Apple which accounts for 55% of its smartphone sensor revenue....

    Sony CIS Yield Crisis: Supply Chain Concerns for Apple
Contact Information
close