MTE50N10BFP

Introducing the MTE50N10BFP, a high-performance power MOSFET designed to meet the demands of various industrial applications. This power MOSFET is built with the latest technology to provide efficient and reliable performance. The MTE50N10BFP offers a low gate charge and superior switching characteristics, making it an ideal choice for high-frequency applications. With a maximum drain current of 50A and a maximum drain-source voltage of 100V, this MOSFET can handle heavy load conditions with ease. Equipped with a built-in body diode, the MTE50N10BFP ensures smooth and efficient current flow. Its low on-resistance of 0.02Ω reduces power dissipation and allows for high power handling capabilities. This power MOSFET is housed in a compact and durable TO-220 package, making it suitable for a wide range of applications including motor control, uninterruptible power supply (UPS), and power inverters. With its outstanding performance and reliability, the MTE50N10BFP is the perfect choice for demanding industrial applications that require high power handling capabilities in a compact package.