IXTY2N80P

Introducing the IXTY2N80P, a powerful and efficient N-channel Power MOSFET designed for a wide range of applications. With a maximum drain-source voltage of 800V and a continuous drain current of 2A, this MOSFET offers excellent performance and reliability. Its low on-resistance of 4.5Ω ensures low power losses and improved efficiency, making it ideal for power switching applications in industrial, consumer electronics, and automotive sectors. The IXTY2N80P also features a fast switching speed and a low gate charge, enabling high-speed switching operations and minimizing power dissipation. Its compact TO-251 package provides ease of use and enables space-saving designs in various applications. Furthermore, this MOSFET offers a wide operating temperature range of -55°C to 150°C, ensuring stable and consistent performance in extreme environments. Its robust design and high avalanche energy capability make it reliable and resilient to withstand voltage spikes and other electrical stresses. Overall, the IXTY2N80P is a high-performance N-channel Power MOSFET that delivers unparalleled efficiency, reliability, and versatility for a wide range of power switching applications.